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1

[Lecture Notes in Physics] Physics of Narrow Gap Semiconductors Volume 152 || Phonon and electrical resistivity anomalies at the displacive phase transition in Pb 1−XSnXTe and Pb 1−XGeXTe

Gornik, E., Heinrich, H., Palmetshofer, L.

Year:

1982

Language:

english

File:

PDF, 222 KB

english, 1982

2

Evidence for shallow bound states in PbTe

Lewis, A. V., Kuchar, F., Nicholas, R. J., Pallmetsshofer, L., Palmetshofer, L.

Journal:

Physical Review B

Year:

1983

Language:

english

File:

PDF, 344 KB

english, 1983

3

Coherent Raman spectroscopy of spin transitions in semimagnetic

Pascher, H., Röthlein, P., Bauer, G., Palmetshofer, L.

Journal:

Physical Review B

Year:

1987

Language:

english

File:

PDF, 193 KB

english, 1987

4

Parameterization of the harmonic content of the complex MPI signal of magnetic tracers using a set of polynomial coefficients

Schmidt, Daniel, Palmetshofer, Florian, Steinhoff, Uwe

Journal:

Journal of Magnetism and Magnetic Materials

Year:

2015

Language:

english

File:

PDF, 909 KB

english, 2015

5

A Phenomenological Description of the MPS Signal Using a Model for the Field Dependence of the Effective Relaxation Time

Schmidt, Daniel, Palmetshofer, Florian, Heinke, David, Steinhoff, Uwe, Ludwig, Frank

Journal:

IEEE Transactions on Magnetics

Year:

2015

Language:

english

File:

PDF, 404 KB

english, 2015

6

Comparison of shallow depth profiles of cobalt-implanted Si wafers determined by total reflection x-ray fluorescence analysis after repeated stratified etching and by rutherford backscattering spectrometry

Klockenkämper, R., von Bohlen, A., Becker, H. W., Palmetshofer, L.

Journal:

Surface and Interface Analysis

Year:

1999

Language:

english

File:

PDF, 94 KB

english, 1999

7

Synchrotron radiation-excited glancing incidence xrf for depth profile and thin-film analysis of light elements

P. Kregsamer, Christina Streli, P. Wobrauschek, H. Gatterbauer, P. Pianetta, L. Palmetshofer, Lora L. Brehm

Journal:

X-Ray Spectrometry

Year:

1999

Language:

english

File:

PDF, 144 KB

english, 1999

8

Ion beam ablation of polytetrafluoroethylene

V. Švorčík, I. Miček, V. Rybka, L. Palmetshofer, V. Hnatowicz

Journal:

Journal of Applied Polymer Science

Year:

1998

Language:

english

File:

PDF, 147 KB

english, 1998

9

NFAT transcription factors in control of peripheral T cell tolerance

Edgar Serfling, Stefan Klein-Hessling, Alois Palmetshofer, Tobias Bopp, Michael Stassen, Edgar Schmitt

Journal:

European Journal of Immunology

Year:

2006

Language:

english

File:

PDF, 186 KB

english, 2006

10

Laser annealing of defects in CdTe epitaxial layers

D.J. As, L. Palmetshofer

Journal:

Journal of Crystal Growth

Year:

1985

Language:

english

File:

PDF, 438 KB

english, 1985

11

Luminescence of Fe+-implanted CdTe

R. Kernöcker, K. Lischka, L. Palmetshofer

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 331 KB

english, 1990

12

Characterization of high-dose implants of Co and Cr in Si by RBS

A Climent-Font, U Wätjen, H Bax, L Palmetshofer

Journal:

Year:

1991

Language:

english

File:

PDF, 542 KB

english, 1991

13

96/02636 - Ion implantation in fullerenes

J. Kastner, L. Palmetshofer

Journal:

Fuel and Energy Abstracts

Year:

1996

Language:

english

File:

PDF, 155 KB

english, 1996

14

Implantation of Mn In PbTe and synthesis of Pb1−xMnxTe

L. Palmetshofer, B. Wakolbinger, E. Zinner

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1983

Language:

english

File:

PDF, 393 KB

english, 1983

15

Influence of exchange interaction on bandstructure of Pb1−xMnxTe

J. Niewodniczanska-Zawadzka, G. Elsinger, L. Palmetshofer, A. Lopez-Otero, E.J. Fantner, G. Bauer, W. Zawadzki

Journal:

Year:

1983

Language:

english

File:

PDF, 215 KB

english, 1983

16

Range evaluation in SIMS depth profiles of Er-implantations in silicon

K. Mayerhofer, H. Foisner, K. Piplits, G. Hobler, L. Palmetshofer, H. Hutter

Journal:

Applied Surface Science

Year:

2005

Language:

english

File:

PDF, 259 KB

english, 2005

17

Multiscale approach for the analysis of channeling profile measurements of ion implantation damage

G. Hobler, G. Otto, D. Kovač, L. Palmetshofer, K. Mayerhofer, K. Piplits

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2005

Language:

english

File:

PDF, 308 KB

english, 2005

18

Is there an influence of ion-beam-induced interfacial amorphization on the a/c-interface depth in silicon at common implantation energies?

G. Otto, G. Hobler, P. Pongratz, L. Palmetshofer

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2006

Language:

english

File:

PDF, 681 KB

english, 2006

19

Dry wear behaviour of boron- and nitrogen-implanted steels

L. Palmetshofer, J. Faderl, F. Lehner

Journal:

Materials Science and Engineering: A

Year:

1989

Language:

english

File:

PDF, 523 KB

english, 1989

20

Dose-rate dependence of damage formation in Si by N implantation as determined from channeling profile measurements

G. Otto, G. Hobler, L. Palmetshofer, K. Mayerhofer, K. Piplits, H. Hutter

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2006

Language:

english

File:

PDF, 270 KB

english, 2006

21

Amorphous pockets in Si: Comparison of coupled molecular dynamics and TEM image contrast simulations with experimental results

G. Otto, G. Hobler, L. Palmetshofer, P. Pongratz

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2007

Language:

english

File:

PDF, 1.06 MB

english, 2007

22

Optical Er-doping of Si during sublimational molecular beam epitaxy

B.A Andreev, A.Yu Andreev, H Ellmer, H Hutter, Z.F Krasil'nik, V.P Kuznetsov, S Lanzerstorfer, L Palmetshofer, K Piplits, R.A Rubtsova, N.S Sokolov, V.B Shmagin, M.V Stepikhova, E.A Uskova

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 113 KB

english, 1999

23

On the origin of 1.5 μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films

N.V. Gaponenko, A.V. Mudryi, O.V. Sergeev, M. Stepikhova, L. Palmetshofer, W. Jantsch, J.C. Pivin, B. Hamilton, A.S. Baran, A.I. Rat'ko

Journal:

Journal of Luminescence

Year:

1998

Language:

english

File:

PDF, 320 KB

english, 1998

24

Properties of optically active Si:Er and Si1−xGex layers grown by the sublimation MBE method

M.V. Stepikhova, B.A. Andreev, V.B. Shmagin, Z.F. Krasil'nik, V.P. Kuznetsov, V.G. Shengurov, S.P. Svetlov, W. Jantsch, L. Palmetshofer, H. Ellmer

Journal:

Thin Solid Films

Year:

2000

Language:

english

File:

PDF, 138 KB

english, 2000

25

Properties of optically active Si:Er and Si1−xGex layers grown by the sublimation MBE method: [Thin Solid Films 369 (2000) 320–323]

M.V. Stepikhova, B.A. Andreev, V.B. Shmagin, Z.F. Krasil'nik, V.P. Kuznetsov, V.G. Shengurov, S.P. Svetlov, W. Jantsch, L. Palmetshofer, H. Ellmer

Journal:

Thin Solid Films

Year:

2001

Language:

english

File:

PDF, 173 KB

english, 2001

26

Low Z total reflection X-ray fluorescence analysis — challenges and answers

C. Streli, P. Kregsamer, P. Wobrauschek, H. Gatterbauer, P. Pianetta, S. Pahlke, L. Fabry, L. Palmetshofer, M. Schmeling

Journal:

Spectrochimica Acta Part B: Atomic Spectroscopy

Year:

1999

Language:

english

File:

PDF, 429 KB

english, 1999

27

Erbium in SiOx environment: ways to improve the 1.54 μm emission

G. Kocher, H. Przybylinska, M. Stepikhova, L. Palmetshofer, W. Jantsch

Journal:

Physica B: Condensed Matter

Year:

2001

Language:

english

File:

PDF, 131 KB

english, 2001

28

On the generation of optically active Er centers in Si light emitting diodes

W Jantsch, S Lanzerstorfer, L Palmetshofer, M Stepikhova, G Kocher, H Preier

Journal:

Physica B: Condensed Matter

Year:

1999

Language:

english

File:

PDF, 119 KB

english, 1999

29

Optimisation of Er centers in Si for reverse biased light emitting diodes

W. Jantsch, G. Kocher, L. Palmetshofer, H. Przybylinska, M. Stepikhova, H. Preier

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 153 KB

english, 2001

30

Range of ion-implanted rare earth elements in Si and SiO2

L. Palmetshofer, M. Gritsch, G. Hobler

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 99 KB

english, 2001

31

Luminescence enhancement by hydrogenation of Si:Er,O

G. Kocher-Oberlehner, W. Jantsch, L. Palmetshofer, A. Ulyashin

Journal:

Physica E: Low-dimensional Systems and Nanostructures

Year:

2003

Language:

english

File:

PDF, 92 KB

english, 2003

32

Shape of the Cyclotron Resonance Absorption Line of Polar Semiconductors: n-InSb at 337 μm

L. Palmetshofer, D. Kranzer

Journal:

physica status solidi (b)

Year:

1974

Language:

english

File:

PDF, 480 KB

english, 1974

33

Ion implantation for preparation of standards for surface and trace analysis in metals

G. Friedbacher, A. Virag, M. Grasserbauer, H. Bubert, L. Palmetshofer, P. Wilhartitz, H. M. Ortner, P. Röudhammer, W. Ritter

Journal:

Surface and Interface Analysis

Year:

1988

Language:

english

File:

PDF, 269 KB

english, 1988

34

Reference samples for depth profiling: Highly accurate calibration of implanted ion dose by neutron activation analysis

R. P. H. Garten, H. Bubert, L. Palmetshofer

Journal:

Surface and Interface Analysis

Year:

1992

Language:

english

File:

PDF, 678 KB

english, 1992

35

Hydrogen content of C60 fullerenes, measured by elastic recoil detection

A. Brandstötter, O. Benka, L. Palmetshofer, E. Steinbauer, J. Kastner

Journal:

Surface and Interface Analysis

Year:

1994

Language:

english

File:

PDF, 347 KB

english, 1994

36

Recording a line profile across ion-implanted conductor paths in Si wafers by a synchrotron beam microprobe

R. Klockenkämper, A. von Bohlen, M. Radke, A. Knöchel, L. Palmetshofer

Journal:

X-Ray Spectrometry

Year:

2002

Language:

english

File:

PDF, 112 KB

english, 2002

37

Nonuniform-channel MOS device

A. Lugstein, W. Brezna, M. Stockinger, B. Goebel, L. Palmetshofer, E. Bertagnolli

Journal:

Applied Physics A: Materials Science & Processing

Year:

2003

Language:

english

File:

PDF, 285 KB

english, 2003

38

Oxygen and hydrogen accumulation at buried implantation-damage layers in hydrogen- and helium-implanted Czochralski silicon

R. Job, A.G. Ulyashin, W.R. Fahrner, A.I. Ivanov, L. Palmetshofer

Journal:

Applied Physics A: Materials Science & Processing

Year:

2001

Language:

english

File:

PDF, 152 KB

english, 2001

39

Contact-dependent inhibition of angiogenesis by cardiac fibroblasts in three-dimensional fibrin gels in vitro: implications for microvascular network remodeling and coronary collateral formation

V. Nehls, Rita Herrmann, Mirja Hühnken, Alois Palmetshofer

Journal:

Cell and Tissue Research

Year:

1998

Language:

english

File:

PDF, 953 KB

english, 1998

40

Characterization of the Element Distribution Within TiN Coatings with SIMS

Thomas Kolber, Kurt Piplits, Leopold Palmetshofer, Herbert Hutter

Journal:

Microchimica Acta

Year:

2000

Language:

english

File:

PDF, 286 KB

english, 2000

41

Temperature induced clustering of Mn in Pb1−xMnxTe

H. Lettenmayr, W. Jantsch, L. Palmetshofer

Journal:

Solid State Communications

Year:

1987

Language:

english

File:

PDF, 182 KB

english, 1987

42

Different Er centres in Si and their use for electroluminescent devices

W. Jantsch, S. Lanzerstorfer, L. Palmetshofer, M. Stepikhova, H. Preier

Journal:

Journal of Luminescence

Year:

1998

Language:

english

File:

PDF, 264 KB

english, 1998

43

Vaccinations with T-helper type 1 directing adjuvants have different suppressive effects on the development of allergen-induced T-helper type 2 responses

C. M. Trujillo-Vargas, K. D. Mayer, T. Bickert, A. Palmetshofer, S. Grunewald, J. R. Ramirez-Pineda, T. Polte, G. Hansen, G. Wohlleben, K. J. Erb

Journal:

Clinical & Experimental Allergy

Year:

2005

Language:

english

File:

PDF, 861 KB

english, 2005

44

Tyrosine phosphorylation following lectin meiated endothelial cell stimulation

Alois Palmetshofer, Simon C Robson, Fritz H Bach

Journal:

Xenotransplantation

Year:

1998

Language:

english

File:

PDF, 571 KB

english, 1998

45

Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy

A. Yu. Andreev, B. A. Andreev, M. N. Drozdov, Z. F. Krasil’nik, M. V. Stepikhova, V. B. Shmagin, V. P. Kuznetsov, R. A. Rubtsova, E. A. Uskova, Yu. A. Karpov, H. Ellmer, L. Palmetshofer, K. Piplits, H

Journal:

Year:

1999

Language:

english

File:

PDF, 84 KB

english, 1999

46

Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy

V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maksimov, Z. F. Krasil’nik, B. A. Andreev, M. V. Stepikhova, D. V. Shengurov, L. Palmetshofer, H. Ellmer

Journal:

Year:

2001

Language:

english

File:

PDF, 147 KB

english, 2001

47

Contribution to the characterization of reference materials for thin-film analysis in solar-energy and semiconductor technologies

R. P. H. Garten, H. Bubert, L. Palmetshofer, V. M. Korol

Journal:

Analytical and Bioanalytical Chemistry

Year:

1994

Language:

english

File:

PDF, 220 KB

english, 1994

48

Growth of Pb1−xMnxTe thin films by hot-wall epitaxy

G. Elsinger, L. Palmetshofer, A. Lopez-Otero

Journal:

Il Nuovo Cimento D

Year:

1983

Language:

english

File:

PDF, 289 KB

english, 1983

49

Implizite Determinierung von Plan-Belegungszeiten

Jodlbauer, Herbert, Palmetshofer, Karl, Reitner, Sonja

Journal:

Wirtschaftsinformatik

Year:

2005

Language:

german

File:

PDF, 398 KB

german, 2005

50

Electrical activation and defects in silicon-implanted and rapidly thermal-annealed gallium arsenide

L. Palmetshofer, J. Kastner, K. Lübke

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 446 KB

english, 1991